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T2960BB45E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T2960BB45E
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T2960BB45E pdf
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
Insulated Gate Bi-polar Transistor Type T2960BB45E
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.6
-
-
5.1
55
-
495
1.1
2.2
13
11.5
5.3
2.5
18
17.5
10.9
MAX
3.15
4.0
1.84
0.73
-
85
±35
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 3000A, VGE = 15V, Tj = 25°C
IC = 3000A, VGE = 15V
Current range: 1000A 3000A
VCE = VGE, IC = 300mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =3000A, VCE =2800V, di/dt=5000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 1.3Rg(OFF)=6.8CGE=330nF
Freewheel diode type E2400TC45C at
Tj=125°C.
(Notes 3, 4 & 5)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
kA
Thermal Characteristics
PARAMETER
RthJK Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
75
-
TYP
-
-
-
-
2.8
MAX
4.2
6.87
10.9
85
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements.
3) CGE is additional gate - emitter capacitance added to output of gate drive circuit.
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE.
UNITS
K/kW
K/kW
K/kW
kN
kg
Provisional Data Sheet T2960BB45E Issue A2
Page 2 of 6
May, 2016

विन्यास 6 पेज
डाउनलोड[ T2960BB45E Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
T2960BB45EInsulated Gate Bi-Polar TransistorIXYS
IXYS


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