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T2400GB45E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T2400GB45E
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=T2400GB45E?> डेटा पत्रक पीडीएफ

T2400GB45E pdf
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
Insulated Gate Bi-polar Transistor Type T2400GB45E
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.8
3.6
-
-
5.1
45
-
400
1.4
3.2
18
13
4.6
2.6
14
13
9500
MAX
3.2
4.0
1.49
1.05
-
70
±30
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 2400A, VGE = 15V, Tj = 25°C
IC = 2400A, VGE = 15V
Current range: 800A – 2400A
VCE = VGE, IC = 250mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =2400A, VCE =2800V, di/dt=4000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 2.2Ω, Rg(OFF)=8.2Ω, CGE=267nF
Freewheel diode type E2400TC45C at
Tj=125°C.
(Notes 3, 4 & 5)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
50
-
TYP
-
-
-
-
2
MAX
5.2
8.5
13.5
70
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements.
3) CGE is additional gate - emitter capacitance added to output of gate drive circuit.
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE.
UNITS
K/kW
K/kW
K/kW
kN
kg
Data Sheet T2400GB45E Issue 2
Page 2 of 6
November, 2014

विन्यास 6 पेज
डाउनलोड[ T2400GB45E Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
T2400GB45EInsulated Gate Bi-Polar TransistorIXYS
IXYS


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