DataSheet.in

T2250AB25E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T2250AB25E
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=T2250AB25E?> डेटा पत्रक पीडीएफ

T2250AB25E pdf
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T2250AB25E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.05
2.90
-
-
5.8
20
10
300
1.2
2.7
17
5.3
1.8
8.5
16
3.7
6300
MAX
2.35
3.20
1.29
0.85
6.3
60
±30
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 2250A, VGE = 15V, Tj = 25°C
IC = 2250A, VGE = 15V
Current range: 750 – 2250A
VCE = VGE, IC = 200mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =2250A, VCE =1250V, di/dt=4000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 1.2Ω, Rg(OFF)=3.3Ω, CGE=100nF
Freewheel diode type E2250VF25C
(Note 3)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
25
-
TYP
-
-
-
-
1.5
MAX
8.45
13.3
24.5
35
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
Prospective Data Sheet T2250AB25E Issue P1
Page 2 of 6
January, 2011

विन्यास 6 पेज
डाउनलोड[ T2250AB25E Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
T2250AB25EInsulated Gate Bi-Polar TransistorIXYS
IXYS


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English