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T1800GB45A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T1800GB45A
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T1800GB45A pdf
Insulated Gate Bi-polar Transistor Type T1800GB45A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.8
3.60
-
-
5.1
45
-
280
1.5
3.3
12.5
11
4.7
2.5
10
10.5
5500
MAX
3.2
4.0
1.82
1.21
-
70
±20
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 1800A, VGE = 15V, Tj = 25°C
IC = 1800A, VGE = 15V
Current range: 600A – 1800A
VCE = VGE, IC = 180mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =1800A, VCE =2800V, di/dt=3000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 3Ω, Rg(OFF)=11Ω, CGE=183nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.7
3.9
-
-
1600
2000
1.6
2.8
MAX
4.0
4.2
2.27
1.07
-
-
-
-
TEST CONDITIONS
IF = 1800A, Tj =25°C
IF = 1800A
Current range 600A - 1800A
IF = 1800A, Vr = 2800V, VGE = -15V,
di/dt=3000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
50
-
TYP
-
-
-
-
-
-
-
2
MAX
7.3
11.9
19
14.4
22.3
41.1
70
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Data Sheet T1800GB45A Issue 1
Page 2 of 8
November, 2014

विन्यास 8 पेज
डाउनलोड[ T1800GB45A Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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IXYS


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