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T1600GB45G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T1600GB45G
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T1600GB45G pdf
Insulated Gate Bi-polar Transistor Type T1600GB45G
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.50
-
-
5.1
45
-
270
2.2
4.4
9
12
4.8
2.6
10
8.7
5000
MAX
3.2
3.9
1.79
1.32
-
70
±20
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 1600A, VGE = 15V, Tj = 25°C
IC = 1600A, VGE = 15V
Current range: 530A – 1600A
VCE = VGE, IC = 170mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =1600A, VCE =2800V, di/dt=2700A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 4.3Ω, Rg(OFF)=12Ω, CGE=133nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.3
3.45
-
-
1380
1970
1.7
2.1
MAX
3.6
3.8
2.14
1.04
-
-
-
-
TEST CONDITIONS
IF = 1600A, Tj =25°C
IF = 1600A
Current range 530A - 1600A
IF = 1600A, Vr = 2800V, VGE = -15V,
di/dt=2700A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
50
-
TYP
-
-
-
-
-
-
-
2
MAX
7.8
12.8
20.3
12.3
19.5
35.7
70
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Data Sheet T1600GB45G Issue 1
Page 2 of 8
November, 2014

विन्यास 8 पेज
डाउनलोड[ T1600GB45G Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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IXYS


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