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T1500TB25E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T1500TB25E
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T1500TB25E pdf
Insulated Gate Bi-polar Transistor Type T1500TB25E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.1
2.9
5.8
15
7
200
0.7
2.8
10
3.5
3
2.8
9
2.6
4150
MAX
2.4
3.2
1.31
1.26
6.3
40
±25
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 1500A, VGE = 15V, Tj = 25°C
IC = 1500A, VGE = 15V
Current range: 500A – 1500A
VCE = VGE, IC = 125mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 100kHz, Tj=25°C
IC =1500A, VCE =1250V, di/dt=2500A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 1.8Ω, Rg(OFF)= 3.6Ω, CGE=68nF
Freewheel diode type E2250VF25C at
Tj=125°C
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
15
-
TYP
-
-
-
-
1.2
MAX
12.9
19.8
37
25
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
Data Sheet T1500TB25E Issue 1
Page 2 of 6
February, 2014

विन्यास 6 पेज
डाउनलोड[ T1500TB25E Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
T1500TB25EInsulated Gate Bi-Polar TransistorIXYS
IXYS


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