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T1200TD25A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T1200TD25A
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T1200TD25A pdf
Insulated Gate Bi-polar Transistor Type T1200TD25A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.45
3.15
-
-
5.8
10
-
150
0.75
2.1
8
1.5
1.3
2.5
6.5
2.1
5000
MAX
2.75
3.45
1.42
1.69
-
30
±20
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 1200A, VGE = 15V, Tj = 25°C
IC = 1200A, VGE = 15V
Current range: 400A – 1200A
VCE = VGE, IC = 100mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =1200A, VCE =1250V, di/dt=2000A/µs
VGE = ±15V, Ls=330nH
Rg(ON)= 3Ω, Rg(OFF)=6.2Ω, CGE=47nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
2.45
2.5
-
-
800
840
0.97
0.76
MAX
2.75
2.8
1.59
1.01
-
-
-
-
TEST CONDITIONS
IF = 1200A, Tj =25°C
IF = 1200A
Current range 400A - 1200A
IF = 1200A, Vr = 1250V, VGE = -15V,
di/dt=2000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
15
-
TYP
-
-
-
-
-
-
-
1.2
MAX
16.9
26.5
49
29.2
45.2
84
25
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
Provisional Data Sheet T1200TD25A Issue A1
Page 2 of 8
December, 2014

विन्यास 8 पेज
डाउनलोड[ T1200TD25A Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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