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T0900DF65A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T0900DF65A
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T0900DF65A pdf
Insulated Gate Bi-polar Transistor Type T0900DF65A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
4.4
-
-
-
-
-50
-
-
-
-
-
-
-
-
-
-
TYP
3.6
4.8
-
-
5.2
10
-
160
2.1
2.5
6
9.5
4.5
2.3
5
5.7
4900
MAX
-
5.2
2.49
3.02
-
35
+50
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 900A, VGE = 15V, Tj = 25°C
IC = 900A, VGE = 15V
Current range: 300A – 900A
VCE = VGE, IC = 900mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 10V, VGE = 0V, f = 100kHz, Tj=25°C
IC =900A, VCE =3600V, di/dt=1500A/µs
VGE = ±15V, Ls=280nH
Rg(ON)= 4.7Ω, Rg(OFF)=14Ω, CGE=133nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=3600V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3
3.4
-
-
660
1550
1.7
3.4
MAX
-
3.8
1.89
2.12
-
-
-
-
TEST CONDITIONS
IF = 900A, Tj =25°C
IF = 900A
Current range 300A – 900A
IF = 900A, VGE = -15V, di/dt=1500A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
45
-
TYP
-
-
-
-
-
-
-
1.5
MAX
9.4
14.3
27.6
16
23.4
50.6
55
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Data are obtained using integral diode as freewheeling diode
Prospective Data Sheet T0900DF65A Issue P2
Page 2 of 5
November, 2014

विन्यास 5 पेज
डाउनलोड[ T0900DF65A Datasheet.PDF ]


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T0900DF65AInsulated Gate Bi-Polar TransistorIXYS
IXYS


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