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T0850VB25E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T0850VB25E
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T0850VB25E pdf
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0850VB25E
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.05
2.90
-
-
5.8
8
4
110
1.1
2
6.5
2
1.5
6
6
1.4
2400
MAX
2.35
3.20
1.29
2.25
6.3
25
±15
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 850A, VGE = 15V, Tj = 25°C
IC = 850A, VGE = 15V
Current range: 280 – 850A
VCE = VGE, IC = 75mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =850A, VCE =1250V, di/dt=1500A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 3.0Ω, Rg(OFF)=6.8Ω, CGE=100nF
Freewheel diode type E0800QC25C
(Note 3)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
11
-
TYP
-
-
-
-
0.65
MAX
22.5
35.3
65.3
16
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
Prospective Data Sheet T0850VB25E Issue P1
Page 2 of 6
January, 2011

विन्यास 6 पेज
डाउनलोड[ T0850VB25E Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
T0850VB25EInsulated Gate Bi-Polar TransistorIXYS
IXYS


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