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T0800EB45G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T0800EB45G
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T0800EB45G pdf
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0800EB45G
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.75
3.50
-
-
5.2
20
-
135
1.8
3.3
5
6.3
3.0
2.4
8
3.7
2800
MAX
3.2
3.9
1.74
2.70
-
50
±15
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 800A, VGE = 15V, Tj = 25°C
IC = 800A, VGE = 15V
Current range: 267 - 800A
VCE = VGE, IC = 85mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =800A, VCE =2800V, di/dt=1700A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 5.6Ω, Rg(OFF)=5.6Ω, CGE=90nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp10µs
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.35
3.5
-
-
800
1020
1.5
1.2
MAX
3.6
3.8
2.05
2.19
-
-
-
-
TEST CONDITIONS
IF = 800A, Tj =25°C
IF = 800A
Current range 267 - 800A
IF = 800A, VGE = -15V, di/dt=1700A/µs
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
25
-
TYP
-
-
-
-
-
-
-
1.2
MAX
15.6
25.4
40.5
24.7
37.9
70.8
35
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
UNITS
V
V
V
m
A
µC
µs
J
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Data Sheet T0800EB45G Issue 1
Page 2 of 7
March, 2012

विन्यास 7 पेज
डाउनलोड[ T0800EB45G Datasheet.PDF ]


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