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T0600TB45A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T0600TB45A
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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T0600TB45A pdf
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0600TB45A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.9
3.7
-
-
5.3
13
-
100
1.6
2.7
8
4.6
3.4
2.5
3
2.9
1900
MAX
3.3
4.1
1.8
3.84
-
30
±7
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 600A, VGE = 15V, Tj = 25°C
IC = 600A, VGE = 15V
Current range: 200 – 600A
VCE = VGE, IC = 60mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =600A, VCE =2800V, di/dt=2000A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 6.8Ω, Rg(OFF)=11Ω, CGE=68nF
Integral diode used as freewheel diode
(Note 3, 4 & 5)
VGE=+15V, VCC=2800V, VCEmaxVCES,
tp25µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
3.6
3.7
-
-
640
700
1.2
0.9
MAX
3.9
4.0
2.18
3.03
-
-
-
-
TEST CONDITIONS
IF = 600A, Tj =25°C
IF = 600A
Current range 200-600A
IF = 600A, VGE = ±15V, di/dt=2000A/µs
UNITS
V
V
V
m
A
µC
µs
J
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
15
-
TYP
-
-
-
-
-
-
20
1.2
MAX
21.8
36.8
53.5
43.2
68
118
25
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Eon integration time 15µs from 10% rising IG.
5) Eoff integration time 15µs from 90% falling VGE .
Advance Data Sheet T0600TB45A Issue A1
Page 2 of 7
April, 2011

विन्यास 7 पेज
डाउनलोड[ T0600TB45A Datasheet.PDF ]


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