DataSheet.in

T0500ND25E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T0500ND25E
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=T0500ND25E?> डेटा पत्रक पीडीएफ

T0500ND25E pdf
Characteristics
Insulated Gate Bi-polar Transistor Type T0500ND25E
IGBT Characteristics
PARAMETER
VCE(sat) Collector emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
Threshold voltage
Slope resistance
Gate threshold voltage
Collector emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
ISC Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.4
3.05
-
-
5.8
5
-
68
0.9
2
5
0.65
1.1
2.6
3
0.87
2150
MAX
2.7
3.35
1.39
3.92
-
15
±10
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 500A, VGE = 15V, Tj = 25°C
IC = 500A, VGE = 15V
Current range: 167A500A
VCE = VGE, IC = 45mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 100kHz, Tj=25°C
IC =500A, VCE =1250V, di/dt=1000A/µs
VGE = ±15V, Ls=850nH
Rg(ON)= 5.6Rg(OFF)= 12CGE=15nF
Freewheel diode type E0800QC25C at
Tj=125°C
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
Thermal Characteristics
PARAMETER
RthJK Thermal resistance junction to sink, IGBT
F Mounting force
Wt Weight
MIN
-
-
-
8
-
TYP
-
-
-
-
0.5
MAX
38.6
60
108
12
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Note 2
UNITS
K/kW
K/kW
K/kW
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate emitter capacitance added to output of gate drive
Data Sheet T0500ND25E Issue 1
Page 2 of 6
August, 2016

विन्यास 6 पेज
डाउनलोड[ T0500ND25E Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
T0500ND25EInsulated Gate Bi-Polar TransistorIXYS
IXYS


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English