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T0360NB25A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bi-Polar Transistor - IXYS

भाग संख्या T0360NB25A
समारोह Insulated Gate Bi-Polar Transistor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
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T0360NB25A pdf
WESTCODE An IXYS Company
Insulated Gate Bi-polar Transistor Type T0360NB25A
Characteristics
IGBT Characteristics
PARAMETER
VCE(sat) Collector – emitter saturation voltage
VT0
rT
VGE(TH)
ICES
IGES
Cies
td(on)
tr(V)
Qg(on)
Eon
td(off)
tf(I)
Qg(off)
Eoff
ISC
Threshold voltage
Slope resistance
Gate threshold voltage
Collector – emitter cut-off current
Gate leakage current
Input capacitance
Turn-on delay time
Rise time
Turn-on gate charge
Turn-on energy
Turn-off delay time
Fall time
Turn-off gate charge
Turn-off energy
Short circuit current
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
2.10
2.95
-
-
5.8
5
2
50
0.95
2
3
0.85
1.3
7.5
2.5
0.6
1000
MAX
2.40
3.25
1.32
5.37
6.3
10
±7
-
-
-
-
-
-
-
-
-
-
TEST CONDITIONS
IC = 360A, VGE = 15V, Tj = 25°C
IC = 360A, VGE = 15V
Current range: 120 – 360A
VCE = VGE, IC = 30mA
VCE = VCES, VGE = 0V
VGE = ±20V
VCE = 25V, VGE = 0V, f = 1MHz
IC =360A, VCE =1250V, di/dt=700A/µs
VGE = ±15V, Ls=200nH
Rg(ON)= 7.5Ω, Rg(OFF)=18Ω, CGE=14.7nF
Integral diode used as freewheel diode
(Note 3 & 4)
VGE=+15V, VCC=1250V, VCEmaxVCES,
tp10µs
Diode Characteristics
PARAMETER
VF Forward voltage
VTo Threshold voltage
rT Slope resistance
Irm Peak reverse recovery current
Qrr Recovered charge
trr Reverse recovery time, 50% chord
Er Reverse recovery energy
MIN
-
-
-
-
-
-
-
-
TYP
2.05
2.25
-
-
240
320
0.9
0.3
MAX
2.35
2.55
1.43
3.11
-
-
-
-
TEST CONDITIONS
IF = 360A, Tj =25°C
IF = 360A
Current range 120-360A
IF = 360A, Vr=1250V, di/dt=700A/µs,
VGE = -15V
Thermal Characteristics
PARAMETER
R
thJK
Thermal resistance junction to sink, IGBT
R
thJK
Thermal resistance junction to sink, Diode
F Mounting force
Wt Weight
MIN
-
-
-
-
-
-
8
-
TYP
-
-
-
-
-
-
-
0.5
MAX
54.1
84.3
152
73
112
210
12
-
TEST CONDITIONS
Double side cooled
Collector side cooled
Emitter side cooled
Double side cooled
Cathode side cooled
Anode side cooled
Note 2
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) Consult application note 2008AN01 for detailed mounting requirements
3) CGE is additional gate – emitter capacitance added to output of gate drive
4) Figures 6 to 9 are obtained using integral diode as freewheeling diode
UNITS
V
V
V
m
V
mA
µA
nF
µs
µs
µC
J
µs
µs
µC
J
A
UNITS
V
V
V
m
A
µC
µs
J
UNITS
K/kW
K/kW
K/kW
K/kW
K/kW
K/kW
kN
kg
Prospective Data Sheet T0360NB25A Issue P1
Page 2 of 7
August, 2011

विन्यास 7 पेज
डाउनलोड[ T0360NB25A Datasheet.PDF ]


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