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K3380 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N Channel MOS FET - Hitachi

भाग संख्या K3380
समारोह Silicon N Channel MOS FET
मैन्युफैक्चरर्स Hitachi 
लोगो Hitachi लोगो 
पूर्व दर्शन
1 Page
		
<?=K3380?> डेटा पत्रक पीडीएफ

K3380 pdf
2SK3380
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
I Note1
D(pulse)
I DR
Pch
Channel temperature
Tch
Storage temperature
Tstg
Note: 1. PW 10 µs, duty cycle 1%
Ratings
30
±20
300
1.2
300
300
150
–55 to +150
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
30
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current
Zero gate voltege drain
current
I GSS
I DSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
1.3
145
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Note: 2. Pulse test
See characteristics curves of 2SK3288
Typ
1.26
2.8
220
6
18
2
200
600
1100
1100
Max
±5
1
2.3
1.44
3.44
Unit
V
V
µA
µA
V
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 10µA, VDS = 5 V
ID = 150 mA,VGS = 10 V Note 2
ID = 50 mA,VGS = 4 V Note 2
ID = 150 mA, VDS =10 V Note 2
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 150 mA, VGS = 10 V
RL = 66.6
2

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डाउनलोड[ K3380 Datasheet.PDF ]


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