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R1955MC16E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Distributed Gate Thyristor - IXYS

भाग संख्या R1955MC16E
समारोह Distributed Gate Thyristor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=R1955MC16E?> डेटा पत्रक पीडीएफ

R1955MC16E pdf
Characteristics
Distributed Gate Thyristor types R1955MC14x & R1955MC16x
PARAMETER
VTM Maximum peak on-state voltage
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time (note 2)
RthJK Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
19
-
TYP. MAX. TEST CONDITIONS (Note 1)
- 2.00 ITM=2200A
- 2.58 ITM=5900A
- 1.46
- 0.91
- - VD=80% VDRM, Linear ramp, Gate o/c
- 120 Rated VDRM
- 120 Rated VRRM
- 3.0
Tj=25°C
- 300
VD=10V, IT=3A
- 0.25 Rated VDRM
- 1000 Tj=25°C
0.5 1.0 VD=67% VDRM, ITM=1000A, di/dt=60A/µs,
1.0 2.0 IFG=2A, tr=0.5µs, Tj=25°C
900 1000
330 - ITM=1000A, tp=1000µs, di/dt=60A/µs,
145 - Vr=50V
4.5 -
10
-
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=20V/µs
12
-
ITM=1000A, tp=1000µs, di/dt=60A/µs,
Vr=50V, Vdr=33%VDRM, dVdr/dt=200V/µs
- 0.015 Double side cooled
- 0.028 Anode side cooled
- 0.033 Cathode side cooled
- 26
510 -
UNITS
V
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Types R1955MC14x & R1955MC16x Issue A1
Page 2 of 13
April 2014

विन्यास 13 पेज
डाउनलोड[ R1955MC16E Datasheet.PDF ]


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