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R0633YC12E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Distributed Gate Thyristor - IXYS

भाग संख्या R0633YC12E
समारोह Distributed Gate Thyristor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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R0633YC12E pdf
Characteristics
Distributed Gate Thyristor R0633YC12x
PARAMETER
VTM
V0
rS
dv/dt
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
IH Holding current
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Turn-off time
Rth(j-hs) Thermal resistance, junction to heatsink
F Mounting force
Wt Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
20
-
-
5.5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
-
-
-
-
-
-
-
-
-
125
85
65
2.25
-
-
-
-
-
90
1.85 ITM=1000A
1.25
0.614
-
60
60
3.0
200
1000
-
VD=80% VDRM, linear ramp
Rated VDRM
Rated VRRM
Tj=25°C
Tj=25°C
VD=10V, IT=3A
Tj=25°C
100
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
-
-
28
30
0.050
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
Double side cooled
0.10 Single side cooled
10
-
V
V
m
V/µs
mA
mA
V
mA
mA
µC
µC
A
µs
µs
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information for
details of tq codes.
Introduction
The R0633 Distributed Gate thyristor has fast switching characteristics provided by a regenerative,
interdigitated gate. It also exhibits low switching losses and is therefore suitable for medium current,
medium frequency applications.
Data Sheet. Type R0633YC12x Issue 4
Page 2 of 12
July, 2015

विन्यास 12 पेज
डाउनलोड[ R0633YC12E Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
R0633YC12DDistributed Gate ThyristorIXYS
IXYS
R0633YC12EDistributed Gate ThyristorIXYS
IXYS


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