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R0487YC14D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Distributed Gate Thyristor - IXYS

भाग संख्या R0487YC14D
समारोह Distributed Gate Thyristor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=R0487YC14D?> डेटा पत्रक पीडीएफ

R0487YC14D pdf
Characteristics
Distributed Gate Thyristor types R0487YC12x to R0487YC14x
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time, 50% Chord
tq Turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
-
5
-
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
- 2.7 ITM=1000A
- 1.738
V
V
- 0.943
m
- - VD=80% VDRM, Linear ramp, Gate o/c
- 60 Rated VDRM
- 60 Rated VRRM
V/s
mA
mA
- 3.0
Tj=25°C
- 200
VD=10V, IT=3A
V
mA
- 0.25 Rated VDRM
V
- 1000 Tj=25°C
mA
0.4 1.0 VD=67% VDRM, ITM=2000A, di/dt=60A/µs,
1.0 2.0 IFG=2A, tr=0.5µs, Tj=25°C
µs
90 -
µC
40 55
µC
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V
45 -
A
1.9 -
µs
-
-
20
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/µs
25
ITM=550A, tp=500µs, di/dt=40A/µs, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/µs
µs
- 0.05 Double side cooled
K/W
- 0.1 Single side cooled
K/W
-9
kN
90 -
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for
details of tq codes.
Data Sheet. Type R0487YC12x to R0487YC14x Issue 4
Page 2 of 12
November, 2014

विन्यास 12 पेज
डाउनलोड[ R0487YC14D Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
R0487YC14DDistributed Gate ThyristorIXYS
IXYS
R0487YC14EDistributed Gate ThyristorIXYS
IXYS


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