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MCC26-08io1B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Thyristor Module - IXYS

भाग संख्या MCC26-08io1B
समारोह Thyristor Module
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=MCC26-08io1B?> डेटा पत्रक पीडीएफ

MCC26-08io1B pdf
MCC26-08io1B
Thyristor
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 800 V
VR/D = 800 V
forward voltage drop
IT = 40 A
I T = 80 A
IT = 40 A
I T = 80 A
average forward current
TC = 85°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 125°C
TVJ = 125°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 25°C
TC = 125°C
TVJ = 125 °C; f = 50 Hz
repetitive, IT = 45 A
tP = 200 µs; diG /dt =0.45 A/µs;
IG = 0.45 A; V = VDRM
non-repet., IT = 27 A
V = VDRM
TVJ = 125°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 125°C
latching current
holding current
gate controlled delay time
turn-off time
t p = 10 µs
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VR = 100 V; IT = 20 A; V = VDRM TVJ =100 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
900 V
800 V
100 µA
3 mA
1.27 V
1.64 V
1.27 V
1.65 V
27 A
42 A
0.85 V
11 m
0.88 K/W
0.20 K/W
115 W
520 A
560 A
440 A
475 A
1.35 kA²s
1.31 kA²s
970 A²s
940 A²s
22 pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
1000 V/µs
1.5 V
1.6 V
100 mA
200 mA
0.2 V
10 mA
450 mA
200 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b

विन्यास 6 पेज
डाउनलोड[ MCC26-08io1B Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
MCC26-08io1BThyristor ModuleIXYS
IXYS


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