DataSheet.in

MCD95-18io1B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Thyristor / Diode Module - IXYS

भाग संख्या MCD95-18io1B
समारोह Thyristor / Diode Module
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
1 Page
		
<?=MCD95-18io1B?> डेटा पत्रक पीडीएफ

MCD95-18io1B pdf
MCD95-18io1B
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1800 V
VR/D = 1800 V
forward voltage drop
IT = 150 A
I T = 300 A
IT = 150 A
I T = 300 A
average forward current
TC = 85°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 125°C
TVJ = 125°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 125°C
VR = 0 V
TVJ = 25°C
TC = 125°C
TVJ = 125 °C; f = 50 Hz
repetitive, IT = 250 A
tP = 200 µs; diG /dt =0.45 A/µs;
IG = 0.45 A; V = VDRM
non-repet., IT = 116 A
V = VDRM
TVJ = 125°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 125°C
latching current
holding current
gate controlled delay time
turn-off time
t p = 10 µs
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VR = 100 V; IT = 150 A; V = VDRM TVJ =100 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1900 V
1800 V
200 µA
5 mA
1.29 V
1.50 V
1.28 V
1.70 V
116 A
182 A
0.85 V
2.4 m
0.22 K/W
0.20 K/W
455 W
2.25 kA
2.43 kA
1.92 kA
2.07 kA
25.3 kA²s
24.6 kA²s
18.3 kA²s
17.7 kA²s
119 pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
1000 V/µs
2.5 V
2.6 V
150 mA
200 mA
0.2 V
10 mA
450 mA
200 mA
2 µs
185 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222c

विन्यास 6 पेज
डाउनलोड[ MCD95-18io1B Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
MCD95-18io1BThyristor / Diode ModuleIXYS
IXYS


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English