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CMA80PD1600NA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Thyristor - IXYS

भाग संख्या CMA80PD1600NA
समारोह Thyristor
मैन्युफैक्चरर्स IXYS 
लोगो IXYS लोगो 
पूर्व दर्शन
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<?=CMA80PD1600NA?> डेटा पत्रक पीडीएफ

CMA80PD1600NA pdf
CMA80PD1600NA
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1600 V
VR/D = 1600 V
forward voltage drop
IT = 80 A
I T = 160 A
IT = 80 A
I T = 160 A
average forward current
TC = 80°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 240 A
tP = 200 µs; diG /dt = 0,3 A/µs;
IG = 0,3 A; V = VDRM
non-repet., IT = 80 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0,3 A; diG/dt = 0,3 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0,3 A; diG/dt = 0,3 A/µs
VR = 100 V; IT = 80 A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1700 V
1600 V
100 µA
10 mA
1,30 V
1,64 V
1,29 V
1,72 V
80 A
126 A
0,86 V
5,5 m
0,45 K/W
0,10 K/W
270 W
1,07 kA
1,16 kA
910 A
980 A
5,73 kA²s
5,55 kA²s
4,14 kA²s
4,00 kA²s
54 pF
10 W
5W
0,5 W
150 A/µs
500 A/µs
1000 V/µs
1,5 V
1,6 V
100 mA
200 mA
0,2 V
10 mA
450 mA
200 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b

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