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2SA1162 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP Epitaxial Type Transistor - Bruckewell

भाग संख्या 2SA1162
समारोह Silicon PNP Epitaxial Type Transistor
मैन्युफैक्चरर्स Bruckewell 
लोगो Bruckewell लोगो 
पूर्व दर्शन
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<?=2SA1162?> डेटा पत्रक पीडीएफ

2SA1162 pdf
2SA1162
Silicon PNP Epitaxial Type Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATING @ Ta=25°C unless otherwise specified
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
IB Base Current
PC Collector Dissipation
Tj Junction Temperature
Tstg Storage Temperature Range
Value
-50
-50
-5
-150
-30
150
125
-55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
ICBO Collector cut-off current
VCB = -50 V , IE = 0
IEBO Emitter cut-off current
VEB = -5 V , IC = 0
hFE
VCE(sat)
fT
DC current gain
Collector-emitter saturation voltage
Transition frequency
VCE = -6 V , IC = -2 mA
IC = -100mA , IB = -10mA
VCE = -10 V , IC = -1 mA
Cob Collector output capacitance
VCB = -10 V , IE = 0
f = 1.0MHz
NF Noise figure
*Pulse test: tp≤300μs, δ≤0.02.
VCE = -6 V, IC = -0.1 mA
f = 1.0KHz , Rg = 10kΩ
MIN
70
TYP
-0.1
60
4
MAX
-0.1
-0.1
400
-0.3
UNIT
μA
μA
V
MHz
7 pF
1.0 10 dB
hFE CLASSIFICATION
Marking
Rank
Range
SO
O
70-140
SY
Y
120~240
SR
GR
200-400
Publication Order Number: [2SA1162]
© Bruckewell Technology Corporation Rev. A -2014

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