DataSheet.in

2N6520 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage Transistors - ON Semiconductor

भाग संख्या 2N6520
समारोह High Voltage Transistors
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=2N6520?> डेटा पत्रक पीडीएफ

2N6520 pdf
NPN − 2N6515, 2N6517; PNP − 2N6520
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
2N6515
2N6517, 2N6520
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
2N6515
2N6517, 2N6520
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
2N6515, 2N6517
2N6520
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
(VCB = 250 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
2N6515
2N6517, 2N6520
2N6515, 2N6517
2N6520
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 10 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 30 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 50 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
(IC = 100 mAdc, VCE = 10 Vdc)
2N6515
2N6517, 2N6520
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
Base−Emitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
2N6515, 2N6517
2N6520
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)
Turn−Off Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Ccb
Ceb
ton
toff
Min
250
350
250
350
6.0
5.0
35
20
50
30
50
30
45
20
25
15
40
Max Unit
Vdc
Vdc
Vdc
nAdc
50
50
nAdc
50
50
300
200
220
200
Vdc
0.30
0.35
0.50
1.0
Vdc
0.75
0.85
0.90
2.0 Vdc
200 MHz
6.0 pF
pF
80
100
200 ms
3.5 ms
http://onsemi.com
2

विन्यास 7 पेज
डाउनलोड[ 2N6520 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2N652GERMANIUM PNP MILLIWATT TRANSISTORSMotorola
Motorola
2N652Trans GP BJT PNP 0.5ANew Jersey Semiconductor
New Jersey Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English