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2N6517M डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN transistor - BLUE ROCKET ELECTRONICS

भाग संख्या 2N6517M
समारोह Silicon NPN transistor
मैन्युफैक्चरर्स BLUE ROCKET ELECTRONICS 
लोगो BLUE ROCKET ELECTRONICS लोगो 
पूर्व दर्शन
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<?=2N6517M?> डेटा पत्रक पीडीएफ

2N6517M pdf
2N6517M
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
数值
Rating
350
350
6.0
500
300
150
-55150
单位
Unit
V
V
V
mA
mW
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base–Emitter On Voltage
Transition Frequency
Collector Output Capacitance
符号
Symbol
测试条件
Test Conditions
VCBO IC=100μA IE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
350 V
*VCEO IC=1.0mA IB=0
350
V
VEBO IE=10μA
ICBO
IEBO
hFE(1)
*hFE(2)
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
*VBE(ON)
fT
Cob
VCB=250V
VEB=4.0V
VCE=10V
VCE=10V
VCE=10V
IC=10mA
IC=50mA
IC=10mA
IC=30mA
VCE=10V
VCE=20V
f=20MHz
VCB=20V
f=1MHz
IC=0
IE=0
IC=0
IC=30mA
IC=100mA
IC=1.0mA
IB=1.0mA
IB=5.0mA
IB=1.0mA
IB=3.0mA
IC=100mA
IC=10mA
IE=0
6.0
30
15
20
40
V
0.05 μA
0.05 μA
200
0.3 V
1.0 V
0.75 V
0.9 V
2.0 V
200 MHz
6.0 pF
*脉冲测试:脉宽≤300μS,占空比≤2.0%。
*pulse test: pulse width300μS,duty cycle2.0%.
http://www.fsbrec.com
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