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BTA12F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Triac - BLUE ROCKET ELECTRONICS

भाग संख्या BTA12F
समारोह Triac
मैन्युफैक्चरर्स BLUE ROCKET ELECTRONICS 
लोगो BLUE ROCKET ELECTRONICS लोगो 
पूर्व दर्शन
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<?=BTA12F?> डेटा पत्रक पीडीएफ

BTA12F pdf
BTA12F
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Repetitive peak off-state voltages
RMS on-state current(full sine wave
TC=90)
Non repetitive surge peak on-state
current(full cycle, Tj initial =25°C)
Non repetitive surge peak on-state
current(full cycle, Tj initial =25°C)
I2t value for fusing
Critical rate of rise of on-state current
IG =2xIGT, tr100 nsF=120Hz Tj=125℃)
Non repetitive surge peak off-state
Voltage(tp = 10 ms Tj =25°C)
Peak gate current(tp =20μs Tj=125)
Average gate power dissipation(Tj=125)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case (AC)
符号
Symbol
VDRM/VRRM
IT(RMS)
ITSM(F=50Hz
t=20ms)
ITSM(F=60Hz
t=16.7ms)
I2t(tp=10ms)
dI/dt
VDSM/VRSM
IGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-c)
数值
Rating
600/800
12
120
126
78
50
VDRM/VRRM
+ 100
4.0
1.0
-40125
-40150
60
2.3
电性能参数 / Electrical Characteristics(Ta=25)
免缓冲器和逻辑电平(3 象限) / Snubberless and logic level3 quadrants)
单位
Unit
V
A
A
A
A2s
A/μs
V
A
W
/W
/W
符号
Symbol
IGT(1)
测试条件
Test Conditions
VD=12V RL=30
信号区
Quadrant
I-II-III
Max.
BTA12F
TW SW CW BW
5 10 35 50
单位
Unit
mA
VGT VD=12V RL=30
VGD
VD=VDRM RL=3.3K
Tj=125
IH(2) IT=100mA
I-II-III
I-II-III
Max.
1.3
Min. 0.2
Max. 10 15 35 50
V
V
mA
IL IG=1.2IGT
I-III
II
Max.
10
15
25
30
50
60
70
80
mA
dV/dt (2)
(dI/dt)c (2)
VD = 67 % VDRM gate open
Tj = 125° C
(dV/dt)c = 0.1V/μS Tj = 125° C
(dV/dt)c = 10V/μS Tj = 125° C
Min. 20 40 500 1000 V/μs
Min. 3.5 6.5
Min. 1.0 2.9
A/mS
Without snubber
Tj = 125° C
Min.
6.5 12
Note 1minimum IGT is guaranted at 5% of IGT max.
Note 2for both polarities of A2 referenced to A1.
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