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BTA08F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Triac - BLUE ROCKET ELECTRONICS

भाग संख्या BTA08F
समारोह Triac
मैन्युफैक्चरर्स BLUE ROCKET ELECTRONICS 
लोगो BLUE ROCKET ELECTRONICS लोगो 
पूर्व दर्शन
1 Page
		
<?=BTA08F?> डेटा पत्रक पीडीएफ

BTA08F pdf
BTA08F
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Repetitive peak off-state voltages
RMS on-state current(full sine wave
TC=105)
Non repetitive surge peak on-state
current(full cycle, Tj initial=25°C)
Non repetitive surge peak on-state
current(full cycle, Tj initial=25°C)
I2t Value for fusing
Critical rate of rise of on-state current IG
=2xIGT tr 100 nsF=120Hz Tj=125℃)
Peak gate current(tp =20μs Tj=125)
Average gate power dissipation(Tj=125)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case (AC)
符号
Symbol
VDRM/VRRM
IT(RMS)
ITSM(F=50Hz
t=20ms)
ITSM(F=60Hz
t=16.7ms)
I2t(tp=10ms)
dI/dt
IGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-c)
DATA SHEET
数值
Rating
600 and 800
8.0
80
84
36
50
4.0
1.0
-40125
-40150
60
2.5
单位
Unit
V
A
A
A
A2s
A/μs
A
W
/W
/W
电性能参数 / Electrical Characteristics(Ta=25)
免缓冲器和逻辑电平(3象限) / Snubberless and logic level3 quadrants)
符号
Symbol
IGT(1)
VGT
VGD
IH(2)
IL
(dV/dt)(2)
(dI/dt)c(2)
测试条件
Test Conditions
信号区
Quadrant
VD=12V RL=30
VD=12V RL=30
VD=VDRM RL=3.3K
Tj=125
IT=100mA
I-II-III
I-II-III
I-II-III
IG=1.2IGT
I-III
II
VD=67% VDRM gate open Tj=125
(dV/dt)c=0.1V/μs Tj=125
(dV/dt)c=10V/μs Tj=125
Without snubber Tj=125
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Min.
Min.
Note 1minimum IGT is guaranted at 5% of IGT max.
Note 2for both polarities of A2 referenced to A1.
BTA08F
单位
TW SW CW BW Unit
5 10 35 50 mA
1.3 V
0.2 V
10 15 35 50 mA
10
15
25
30
50
60
70
80
mA
20 40 400 1000 V/μs
3.5 5.4
-
-
1.5 2.98
-
- A/m s
- - 4.5 7
http://www.fsbrec.com
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