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BTB20-600BW डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Three quadrant triacs - HAOPIN

भाग संख्या BTB20-600BW
समारोह Three quadrant triacs
मैन्युफैक्चरर्स HAOPIN 
लोगो HAOPIN लोगो 
पूर्व दर्शन
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<?=BTB20-600BW?> डेटा पत्रक पीडीएफ

BTB20-600BW pdf
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
BTB20-600BW
Three quadrant triacs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
VDRM
IT(RMS)
Repetitive peak off-state
Voltages
RMS on-state current
CONDITIONS
Tj=125oC
360o conduction angle Tc=90oC
MAX
-
-
ITSM
Non repetitive surge
peak on-statecurrent
full cycle,
Tj initial= 25oC
I2t I2t value
tp=8.3ms
tp=10ms
Tp=10ms
-
-
-
Value
600
20
210
200
200
UNIT
V
A
A
A
A2S
DI/dt
Critical rate of rise of
on-state current
Gate supply:IG=500mA
dlG/dt=1A/us
Repetitive
F=50Hz
Non repetitive
-
-
20 A/ s
100
IDRM
IRRM
VDRM rated
VRRM rated
Tj=25oC
Tj=125oC
0.01
3
-
-
mA
mA
TI
Maximum lead soldering temperature during 10s at 4.5mm form case
-
260
OC
Tstg Storage and operating junction temperature range
-40 150 OC
Tj Storage and operating junction temperature range
-40 125 OC
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT
VD=12V(DC); RL=33
Tj=25oC
VGT
IL IG=1.2 IGT
Tj=25oC
IH
VGD
dV/dt
(dv/dt)c
IT=500mA Gate open
VD=VDRM RL=3.3K
VD=67%VDRM gate open;
Without snubber
Dynamic Characteristics
Tj=25oC
Tj=125oC
Tj=125oC
TJ=125OC
V (TM 2)
tgt
lTM=28A tp=380us
VD=VDRM IG=500mA
dlG/dt=3A/us
TJ=25OC
TJ=25OC
MIN TYP MAX UNIT
I-II-III 2 - 50 mA
I-II-III
-
- 1.5 V
I-III - 50 -
II - 90 - mA
I-II-III - - -
- - 75 mA
I-II-III
0.2
-
-
V
500 750 - V/ s
18 36
- A/ms
I-II-III
-
-
- 1.70 V
2-
s
http://www.haopin.com
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