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BTA08-600S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - logic level and standard 8A Triacs - STMicroelectronics

भाग संख्या BTA08-600S
समारोह logic level and standard 8A Triacs
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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BTA08-600S pdf
Characteristics
BTA08, BTB08, T810, T835, T850
1 Characteristics
Symbol
Table 1: Absolute maximum ratings (Tj = 25 °C unless otherwise stated)
Parameter
Value
Unit
IT(RMS)
ITSM
I2t
dl/dt
IGM
PG(AV)
Tstg
Tj
RMS on-state current
(full sine wave)
IPAK, DPAK,
TO-220AB,
D²PAK
TO-220ABIns.
Non repetitive surge peak
on-state current
(full cycle, Tj initial = 25 °C)
I2t value for fusing
f = 50 Hz
f = 60 Hz
Critical rate of rise of on-state
current IG = 2 x IGT, tr ≤ 100 ns
f = 120 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tc = 110 °C
Tc = 100 °C
t = 20 ms
tp = 16.7 ms
tp = 10 ms
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
8A
80
A
84
36 A2s
50 A/µs
4
1
-40 to +150
-40 to +125
A
W
°C
°C
Table 2: Electrical characteristics (Tj = 25 °C, unless otherwise specified) Snubberless and
logic level (3 quadrants)
Symbol Parameter Quadrant
T8 BTA08/BTB08
Unit
10 35 50 TW SW CW BW
IGT(1)
VGT
VD = 12 V,
RL = 30 Ω
I - II - III Max. 10 35 50 5 10 35 50 mA
I - II - III Max.
1.2
V
VD = VDRM,
VGD RL = 3.3 kΩ, I - II - III Min.
Tj = 125 °C
0.2
V
IH(2) IT = 100 mA
Max. 15 35 50 10 15 35 50 mA
I - III Max. 25 50 70 10 25 50 70
IL IG = 1.2 x IGT
mA
II Max. 30 60 80 15 30 60 80
dV/dt
VD = 67% VDRM,
gate open, Tj = 125 °C
Max. 40 400 1000 20 40 400 1000 V/µs
(dV/dt)c = 0.1 V/µs,
Tj = 125 °C
Min. 5.4
3.5 5.4
(dl/dt)c
(dV/dt)c = 10 V/µs,
Tj = 125 °C
Min. 2.8
1.5 2.98
A/ms
Without snubber,
Tj = 125 °C
Min. 4.5 7
4.5 7
Notes:
(1)Minimum IGT is guaranteed at 5 % of IGT max.
(2)For both polarities of A2 referenced to A1
2/18 DocID7472 Rev 12

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