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IRF540A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - nELL

भाग संख्या IRF540A
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स nELL 
लोगो nELL लोगो 
पूर्व दर्शन
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<?=IRF540A?> डेटा पत्रक पीडीएफ

IRF540A pdf
SEMICONDUCTOR
IRF540 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Rth(c-s)
Rth(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
Min.
Typ.
0.50
Max.
1.00
62
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
STATIC
V(BR)DSS
▲ ▲V(BR)DSS/ TJ
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
IDSS
Drain to source leakage current
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
gfS
Gate threshold voltage
Forward transconductance
DYNAMIC
CISS
Input capacitance
COSS
Output capacitance
CRSS
td(ON)
Reverse transfer capacitance
Turn-on delay time
tr Rise time
td(OFF)
Turn-off delay time
VGS = 0V, ID = 250µA
ID = 1mA, referenced to 25°C
VDS=100V, VGS=0V TC = 25°C
VDS=80V, VGS=0V
TC=125°C
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = 10V, lD = 17A (Note 1)
VGS=VDS, ID=250μA
VDS=50V, ID=17A
VDS = 25V, VGS = 0V, f =1MHz
VDD = 50V, ID = 17A,RD = 2.9Ω,
VGS = 10V, RG=9.1Ω (Note 1)
tf
QG
QGS
QGD
LD
LS
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Internal drain inductance
Internal source inductance
VDS = 80V, VGS = 10V, ID = 17A
Between lead, 6mm from
package and center of die
Min.
100
2.0
8.7
Typ.
0.13
1700
560
120
11
44
53
43
4.5
7.5
Max. UNIT
25.0
250
100
-100
0.077
4.0
V
V/ºC
μA
nA
Ω
V
S
pF
ns
72
11 nC
32
nH
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Is(ISD)
Diode forward voltage
Continuous source to drain current
ISD = 28A, VGS = 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
2.5 V
28
ISM Pulsed source current
G
(Gate)
110 A
trr Reverse recovery time
Qrr Reverse recovery charge
tON Forward turn-on time
ISD = 17A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
180 360
1.3 2.8
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
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