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BFY81 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SILICON DUAL MATCHED NPN TRANSISTORS - TT

भाग संख्या BFY81
समारोह SILICON DUAL MATCHED NPN TRANSISTORS
मैन्युफैक्चरर्स TT 
लोगो TT लोगो 
पूर्व दर्शन
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<?=BFY81?> डेटा पत्रक पीडीएफ

BFY81 pdf
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Per Side
Symbols
Parameters
Test Conditions
Min.
V(BR)CBO
V(BR)CEO(1)
V(BR)EBO
ICBO
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
IC = 10µA
IC = 10mA
IE = 10µA
VCB = 40V
IE = 0
IB = 0
IC = 0
IE = 0
TA = 150°C
45
45
6
IEBO
Emitter-Cut-Off Current VEB = 5V
IC = 0
ICEO
VCE(sat)(1)
VBE(on)
Collector-Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter On Voltage
VCE = 5V
IC = 1.0mA
IC = 100µA
IB = 0
IB = 0.1mA
VCE = 5V
hFE(1)
Forward-current transfer
ratio
IC = 10µA
IC = 100µA
IC = 1.0mA
VCE = 5V
VCE = 5V
VCE = 5V
60
100
150
Typ.
Max.
10
10
10
10
0.35
0.7
Units
V
nA
µA
nA
V
ELECTRICAL MATCHING CHARACTERISTICS
hFE1 (2)
hFE2
|VBE1-VBE2|
|(VBE1-VBE2)TA|(3)
Forward-current transfer
ratio (gain ratio)
Base-Emitter Voltage
Differential
Base-Emitter Voltage
Differential Change Due
To Temperature
IC = 100µA
IC = 100µA
IC = 100µA
VCE = 5V
VCE = 5V
VCE = 5V
0.8
1.0
10 mV
25 µV/°C
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-
current transfer ratio
Cobo
Output Capacitance
NF(3) Noise Figure
Notes
(1) Pulse Width 300us, δ ≤ 2%
(2) The lower of the two readings is taken as hFE1
(3) By design only, not a production test
IC = 500µA
f = 30MHz
VCB = 5V
f = 1.0MHz
IC = 10µA
f = 1.0KHz
VCE = 5V
IE = 0
VCE = 5V
2
6 pF
4 dB
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 2 of 3

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डाउनलोड[ BFY81 Datasheet.PDF ]


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