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1N991B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 500mW SILICON ZENER DIODES - Digitron Semiconductors

भाग संख्या 1N991B
समारोह 500mW SILICON ZENER DIODES
मैन्युफैक्चरर्स Digitron Semiconductors 
लोगो Digitron Semiconductors लोगो 
पूर्व दर्शन
1 Page
		
<?=1N991B?> डेटा पत्रक पीडीएफ

1N991B pdf
1N957B-1N992B
High-reliability discrete products
and engineering services since 1977
500 mW SILICON ZENER DIODES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part
number
Nominal
zener
voltage
(2)
Zener
test
current
Maximum zener impedance(3)
Maximum
DC zener
current
(4)
(1)
VZ
IZT
ZZT @ IZT
ZZK
@IZK
IZM
Volts
mA
Ohms
Ohms
mA
mA
Maximum
surge
current
(5)
IZSM
mA
Maximum reverse
leakage current
IR @VR
µA Volts
Maximum
temperature
coefficient
αvz
%/°C
1N977B
47
2.7
105
1500
0.25
7.9
40
5 35.8 0.095
1N978B
51
2.5
125
1500
0.25
7.4
37
5 38.8 0.096
1N979B
56
2.2
150
2000
0.25
6.8
35
5 42.6 0.096
1N980B
62
2.0
185
2000
0.25
6.0
30
5 47.1 0.097
1N981B
68
1.8
230
2000
0.25
5.5
28
5 51.7 0.097
1N982B
75
1.7
270
2000
0.25
5.0
26
5 56.0 0.098
1N983B
82
1.5
330
3000
0.25
4.6
23
5 62.2 0.098
1N984B
91
1.4
400
3000
0.25
4.1
21
5 69.2 0.099
1N985B
100
1.3
500
3000
0.25
3.7
18
5 76.0 0.110
1N986B
110
1.1
750
4000
0.25
3.3
16
5 83.6 0.110
1N987B
120
1.0
900
4500
0.25
3.1
15
5 91.2 0.110
1N988B
130
0.95
1100
5000
0.25
2.7
13
5 98.8 0.110
1N989B
150
0.85
1500
6000
0.25
2.4
12
5
114.0
0.110
1N990B
160
0.80
1700
6500
0.25
2.2
11
5
121.6
0.110
1N991B
180
0.68
2200
7100
0.25
2.0
10
5
136.8
0.110
1N992B
200
0.65
2500
8000
0.25
1.8
9
5
152.0
0.110
NOTE 1. Zener voltage tolerance on ‘’B’’ suffix is + 5%. Suffix letter A denotes +10%. No suffix denotes +20% tolerance. ‘’C’’ suffix denotes + 2% and ‘’D’’ suffix denotes + 1%.
NOTE 2. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C.
NOTE 3. Zener impedance is derived by superimposing on IZTA 60HZ rms a.c. current equal to 10% of IZT.
NOTE 4: The values of IZM are calculated for a ±5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above VZT which results from zener impedance
and the increase in junction temperature as power dissipation approaches 400mW. In the case of individual diodes IZM is that value of current which results in a dissipation of 400mW at 75°C
lead temperature at 3/8” from body.
NOTE 5: The surge for IZM is a square wave or equivalent half-sine wave pulse of 1/120 second duration.
Rev. 20150825

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