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BAS21HT3G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Voltage Switching Diode - ON Semiconductor

भाग संख्या BAS21HT3G
समारोह High Voltage Switching Diode
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=BAS21HT3G?> डेटा पत्रक पीडीएफ

BAS21HT3G pdf
BAS21HT1G, BAS21HT3G, NSVBAS21HT1G, NSVBAS21HT3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
IR
V(BR)
VF
CD
mAdc
− 0.1
− 100
250 − Vdc
mV
− 1000
− 1250
− 5.0 pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr − 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BAS21HT3GHigh Voltage Switching DiodeON Semiconductor
ON Semiconductor


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