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BAS21AHT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low Leakage Switching Diode - ON Semiconductor

भाग संख्या BAS21AHT1G
समारोह Low Leakage Switching Diode
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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BAS21AHT1G pdf
BAS21AHT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
IR
V(BR)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
VF
CD
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
Min Typ Max Unit
− − 40 nAdc
− − 100 mAdc
250 −
− Vdc
mV
− − 1000
− − 1250
− − 5.0 pF
− 50 − ns
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr tp
10%
t
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at iR(REC) = 3.0 mA)
1200
1000
800
600
400
200
1
1
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
TA = −55°C
25°C
155°C
10 100
FORWARD CURRENT (mA)
Figure 2. Forward Voltage
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1
TA = 155°C
TA = 25°C
TA = −55°C
2
5 10 20
50 100 200 300
REVERSE VOLTAGE (V)
Figure 3. Reverse Leakage
http://onsemi.com
2

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भाग संख्याविवरणविनिर्माण
BAS21AHT1GLow Leakage Switching DiodeON Semiconductor
ON Semiconductor


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