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MMBT3904TT1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - General Purpose Transistors - WILLAS ELECTRONIC

भाग संख्या MMBT3904TT1
समारोह General Purpose Transistors
मैन्युफैक्चरर्स WILLAS ELECTRONIC 
लोगो WILLAS ELECTRONIC लोगो 
पूर्व दर्शन
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<?=MMBT3904TT1?> डेटा पत्रक पीडीएफ

MMBT3904TT1 pdf
WILLAS
FM120-M
MMBT3904TT1THRU
1.0GA SeUnRFeACraE Ml POUuNTrpSCoHOsTeTKTYrBaARnRsIEiRsRtEoCrTsIFIERS -20V- 200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
Package outline
Batch process design, excellent power dissipation offers
ELECbTeRttIeCrAreLvCeHrsAeRleAaCkaTgEeRcIuSrTreICntSa(nTdAt=he25rm°Caul rnelessistoatnhceerw. ise noted) (Continued)
Low profile surCfahcaeramcoteurnistteicd application in order to
Symbol
ON CHLoopAwtRimpAiozCweTebEroRlaoIrsSdsT,sIhpCiagSche(e.3f)ficiency.
DCHiCguhrrceunrtrGenaitnc(1a)pability, low forward voltage drop.
hFE
Min
SOD-123H
Max
0.146(3.7)
0.130(3.3)
Unit
–– 0.012(0.3) Typ.
(I CH=ig0h.1smuArgdec,cVapCaE =b1il.i0tyV. dc)
40 ––
(I CG=ua1.r0drminAgdcfo, rVoCvEe=rv1o.0ltVagdce)protection.
70 ––
(I CU=ltr1a0hmigAhd-cs,pVeCeEd=s1w.0itcVhdicn)g.
(I CS=ili5c0omn Aedpcit,aVxiCaEl=p1la.0nVadrcc)hip, metal silicon junction.
(I CL=ea1d0-0fmreAedpca, VrtsCEm=e1e.0t Vendcv)ironmental standards of
CoMlleILct-oSrT–EDm-1it9te5r0S0a/tu2r2a8tion Voltage
(I RHC =oaHl1oS0gempnrAofrddeuce,cItpBfroo=rd1pu.ac0ct mkfoinArgdpcac)oc(kd3ie)ngsucfofidxe"Gsu"ffix "H"
(MI C e= 5c0hmaAndci, cI Ba=l5.d0maAtdac)
Base–Emitter Saturation Voltage(3)
(I CE=po1x0ym:AUdLc9, 4I -BV=01r.0amteAddfcla) me retardant
VCE(sat)
V BE(sat)
100
60
30
––
––
0.65
300
––
––
0.2
0.3
0.85
0.071(1.8)
0.056(1.4)
Vdc
Vdc 0.040(1.0)
0.024(0.6)
(I CC=as5e0m: MAdocl,dIeBd=p5la.0smtiAc,dSc O) D-123H
SMALTLermSIiGnaNlsA:LPlCaHteAdRteArmCTinEaRlsI,SsToIlCdeSrable
per
,
MIL-STD-750
––0.031(0.8) Typ.
0.95
0.031(0.8) Typ.
Method 2026
Current–Gain — Bandwidth Product
(I CP=ol1a0rmityA:dIcn, dVicCaE=te2d0bVydcc,aft=ho1d0e0MbaHnzd)
OuMtpouutnCtainpgacPitoasnicteion : Any
(VWCBe=ig5h.t0:VAdpc,pIroE x=im0,af t=ed1.00.M01H1zg) ram
fT
C obo
20D0imensions in inches and (millMimHetzers)
–– 4.0 pF
Input Capacitance
(V BE = 0.5MVAdcX, IIMC =U0M, f
=R1A.0TMINHGz)S
AND
ELECTRICAL
CHARACCibTo ERISTICS––
8.0 pF
RatingsInaptu2t5Impeadmanbcieent temperature unless otherwise specified.
Single p(VhaCsEe= h1a0lVf dwca,vIeC,=601H.0zm, Aredscis, tfiv=e1o.0f inkHduzc) tive load.
h ie 1.0 10 pF
  For capVaocltitaivgee lFoeaedd, bdaecraktRe actuiorrent by 20%
(V CE = 10 Vdc,RI AC T=IN1.G0SmAdc, f = 1.0 kHz)
h re 0.5 8.0 X10 –4
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
MarkingSCmodaell–Signal Current Gain
Maximum(VRCeEc=u1rr0enVtdPce,aIkCR=e1v.e0rsmeAVdoclt,afg=e 1.0 kHz)
VRRM
12
20
13 h fe 14
30 40
15100
50
16 400 18
60 80
10
100
115 120
150 200
Output Admittance
Maximum(VRCME =S1V0olVtadgce, I C = 1.0 mAdc, f = 1.0 kHz) VRMS
14
21 h oe 28
351.0 42 40 56 θm7h0os
105 140
MaximumNoDisCeBFliogcukrieng Voltage
VDC
20
  Maximum(VACvEe=ra5g.e0 FVodrcw,aIrCd=R1e0ct0ifµieAddCcu, rRreSn=t 1.0 k , f =  I1O.0 kHz)
30 40
NF
50 60
80
1.0 5.0
 
100
dB
150 200
 
PeaSk WFoIrTwaCrdHSINurGgeCCuHrrAenRt A8.3CmTsEsRinIgSleThICalfSsine-wave IFSM
30
superimpDoeseladyoTnimrateed load (JEDEC metho(dV) CC = 3.0 Vdc,V BE = 0.5Vdc
Typical TRhiseermTaiml Reesistance (Note 2) I C = 10 mAdc, I RB1Θ=JA1.0mAdc)
  td
tr
 Typical JSutnocratiogne CTaimpaecitance (Note 1)
OperatinFgaTlleTmimpeerature Range
(V CC
I C=
= 3.0Vdc,
10 mAdc,I
CJ
BT1 =J
I
B2
=
-55
1.0mAdc)
to
+12t 5s
tf
Storage Temperature Range
TSTG
— 35
40 35
  120200
— 50
  ns
 
-55 tons+150
- 65 to +175
  3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Maximum Forward Voltage at 1.0A DC
VF
0.50 0.70
0.85 0.9 0.92
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.5  
10
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-112012-06
WILLASWEILLELCATSREOLNECICTRCOONRIPC.COR

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डाउनलोड[ MMBT3904TT1 Datasheet.PDF ]


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MMBT3904TT1General Purpose TransistorsWILLAS ELECTRONIC
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