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NSVMMBD352WT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual Schottky Barrier Diode - ON Semiconductor

भाग संख्या NSVMMBD352WT1G
समारोह Dual Schottky Barrier Diode
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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NSVMMBD352WT1G pdf
MMBD352WT1G, NSVMMBD352WT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
VF V
0.60
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 7.0 V)
Capacitance
(VR = 0 V, f = 1.0 MHz)
IR mA
0.25
10
C pF
1.0
TYPICAL CHARACTERISTICS
100 1.0
TA = 85C
10
TA = -40C
1.0
TA = 25C
0.9
0.8
0.7
0.1
0.3
0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.6
0.8 0
1.0 2.0 3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
4.0
http://onsemi.com
2

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अनुशंसा डेटापत्रक

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NSVMMBD352WT1GDual Schottky Barrier DiodeON Semiconductor
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