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BAS16XV2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Switching Diode - ON Semiconductor

भाग संख्या BAS16XV2
समारोह Switching Diode
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=BAS16XV2?> डेटा पत्रक पीडीएफ

BAS16XV2 pdf
BAS16XV2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mA)
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Diode Capacitance (VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 Ω)
Stored Charge
(IF = 10mA to VR = 5.0V, RL = 500 Ω)
Symbol Min Max Unit
IR
V(BR)
VF
CD
VFR
trr
QS
− 1.0
− 50
− 30
100 −
mA
V
mV
− 715
− 855
− 1000
− 1250
− 2.0 pF
− 1.75 V
− 6.0 ns
− 45 pC
+10 V
820 Ω
2.0 k
100 μH
0.1 μF
IF
50 Ω OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 μF
tr tp
10%
t
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IF
trr t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2

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डाउनलोड[ BAS16XV2 Datasheet.PDF ]


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