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BAS16P2T5G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Switching Diode - ON Semiconductor

भाग संख्या BAS16P2T5G
समारोह Switching Diode
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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BAS16P2T5G pdf
BAS16P2T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 75 Vdc)
(VR = 100 Vdc)
(VR = 75 Vdc, TJ = 150°C)
(VR = 25 Vdc, TJ = 150°C)
Reverse Breakdown Voltage
(IBR = 100 mAdc)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns)
Reverse Recovery Time
(IF = IR = 10 mAdc, RL = 50 W)
Stored Charge
(IF = 10 mAdc to VR = 5.0 Vdc,
RL = 500 W)
Symbol
IR
V(BR)
VF
CD
VFR
trr
QS
Min
100
Max
1.0
100
50
30
715
855
1000
1250
2.0
1.75
6.0
45
Unit
mAdc
Vdc
mV
pF
Vdc
ns
pC
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BAS16P2T5GSwitching DiodeON Semiconductor
ON Semiconductor


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