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WNMD2182 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - WillSEMI

भाग संख्या WNMD2182
समारोह MOSFET
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
1 Page
		
<?=WNMD2182?> डेटा पत्रक पीडीएफ

WNMD2182 pdf
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a.e
Maximum Power Dissipation a.
Continuous Drain Current b.e
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2182
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
9.5 7.1
7.6 5.7
1.7 0.9
1.1 0.6
9.3 6.6
7.4 5.3
1.6 0.8
1.0 0.5
38
-55~+150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
t ≤ 10 s
Junction-to-Ambient Thermal Resistance a
Steady State
t ≤ 10 s
Junction-to-Ambient Thermal Resistance b
Steady State
Symbol
RθJA
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
61
102
65
120
54
Maximum
72
128
75
148
63
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper;.
b Surface mounted on FR-4 board using minimum pad size, 1oz copper;.
c Pulse width<380µs, Duty Cycle<2%;.
d Maximum junction temperature TJ=150°C;.
e Current rating is limited by wire-bonding.
Will Semiconductor Ltd.
2 2016/09/08 Rev.1.0

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डाउनलोड[ WNMD2182 Datasheet.PDF ]


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