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WNMD2180 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - WillSEMI

भाग संख्या WNMD2180
समारोह MOSFET
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
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<?=WNMD2180?> डेटा पत्रक पीडीएफ

WNMD2180 pdf
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2180
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±10
11.0 8.2
8.8 6.6
1.7 0.9
1.1 0.6
10.8 7.7
8.6 6.1
1.6 0.8
1.0 0.5
50
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Symbol
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
RθJA
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
61
102
65
120
54
Maximum
72
128
75
148
63
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 2016/11/21- Rev.1.1

विन्यास 8 पेज
डाउनलोड[ WNMD2180 Datasheet.PDF ]


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