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WNMD2176 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - WillSEMI

भाग संख्या WNMD2176
समारोह MOSFET
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
1 Page
		
<?=WNMD2176?> डेटा पत्रक पीडीएफ

WNMD2176 pdf
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNMD2176
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
20
±10
2.8 2.6
2.3 2.1
1.1 0.9
0.7 0.6
2.6 2.3
2.0 1.9
0.9 0.7
0.5 0.4
7
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Single Operation
Parameter
Junction-to-Ambient Thermal Resistance a t ≤ 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t ≤ 10 s
Steady State
Symbol
RθJA
RθJA
Junction-to-Case Thermal Resistance
Steady State RθJC
Typical
90
110
105
133
60
Maximum
108
130
128
158
75
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Jan, 2015 - Rev.1.0

विन्यास 6 पेज
डाउनलोड[ WNMD2176 Datasheet.PDF ]


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