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WNM3018 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - WillSEMI

भाग संख्या WNM3018
समारोह MOSFET
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
1 Page
		
<?=WNM3018?> डेटा पत्रक पीडीएफ

WNM3018 pdf
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM3018
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
30
±20
0.25 0.23
0.20 0.18
0.37 0.31
0.24 0.20
0.22 0.20
0.17 0.16
0.28 0.23
0.18 0.15
1.0
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Symbol
RθJA
RθJA
Steady State RθJC
Typical
285
340
385
455
260
Maximum
335
405
450
545
300
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd.
2 2015/8/10 Rev. 1.0

विन्यास 8 पेज
डाउनलोड[ WNM3018 Datasheet.PDF ]


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