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WNM01N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - WillSEMI

भाग संख्या WNM01N10
समारोह MOSFET
मैन्युफैक्चरर्स WillSEMI 
लोगो WillSEMI लोगो 
पूर्व दर्शन
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<?=WNM01N10?> डेटा पत्रक पीडीएफ

WNM01N10 pdf
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current b d
Maximum Power Dissipation b d
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM01N10
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
100
±20
1.70 1.45
1.36 1.16
1.60 1.15
1.02 0.74
1.50 1.34
1.20 1.07
1.25 1.00
0.80 0.64
7
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t 10 s
Steady State
t 10 s
Steady State
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
60
88
85
105
60
Maximum
78
108
100
125
75
Unit
°C/W
a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380µs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.
Will Semiconductor Ltd.
2
2016/01/18 – Rev. 1.2

विन्यास 7 पेज
डाउनलोड[ WNM01N10 Datasheet.PDF ]


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