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WCR380N65TF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - WillSEMI

भाग संख्या WCR380N65TF
समारोह MOSFET
मैन्युफैक्चरर्स WillSEMI 
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<?=WCR380N65TF?> डेटा पत्रक पीडीएफ

WCR380N65TF pdf
Electronics Characteristics (TA=25oC, unless otherwise noted)
WCR380N65T series
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA,TJ=25°C
VGS = 0 V, ID = 250uA,TJ=150°C
VDS = 600V, VGS = 0V,TJ=25°C
VDS = 0 V, VGS =±30 V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
Gfs
VGS = VDS, ID = 250uA
VGS = 10V, ID = 5A (NOTE D)
VDS= 40V, ID= 5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate resistance
CISS
COSS
CRSS
QG(TOT)
QGS
QGD
Rg
VGS = 0 V,
f = 1.0 MHz, VDS = 400 V
VGS = 10 V,VDS = 480 V,
ID = 10A
VGS=0V,VDS=0V,F=1MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VGS = 10V,
VDS = 400 V,
ID = 11A, RG=20
Drain to Source Diode Characteristics and Maximum Ratings
Forward Voltage
VSD VGS = 0 V, IS = 9.5A
Body-Diode Continuous Current
Body-Diode Pulsed Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Peak reverse recovery Current
IS
ISM
Trr
Qrr
Irrm
IF=9.5A,dI/dt=100A/us,
VDS=100V
Min
650
2.5
Typ Max Unit
700
1
±100
V
V
uA
nA
4.5
0.33 0.38
20
V
s
1140
30
4
32
7.3
14.7
7.4
pF
nC
21
38
ns
84
27
1.5
10
30
347
4
23
V
A
A
nS
uC
A
NOTES:
A. Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75
B. Pulse width limited by maximum junction temperature
C. L=60mH, IAS=2.7A, VDD=50V, Starting TJ=25
D. Pulse Test: Pulse width300us, Duty Cycle 2%
E. Essentially Independent of Operating Temperature Typical Characteristics
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heat sink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Will Semiconductor Ltd.
2 Nov, 2016 - Rev.1.1

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