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TC1550 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N- and P-Channel Enhancement-Mode Dual MOSFET - Supertex

भाग संख्या TC1550
समारोह N- and P-Channel Enhancement-Mode Dual MOSFET
मैन्युफैक्चरर्स Supertex 
लोगो Supertex लोगो 
पूर्व दर्शन
1 Page
		
<?=TC1550?> डेटा पत्रक पीडीएफ

TC1550 pdf
TC1550
N-Channel Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
500 -
-
V VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage
2.0 - 4.0
V VGS = VDS, ID =1.0mA
ΔVGS(th) Change in VGS(th) with temperature
- -3.8 -5.0 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current
-
- 100
nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 10 µA VGS = 0V, VDS = Max Rating
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
- 100
150 350
-
-
mA VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON)
Static drain-to-source
on-state resistance
- 45 -
- 40 60
Ω VGS = 5.0V, ID = 50mA
VGS = 10V, ID = 50mA
ΔRDS(ON) Change in RDS(ON) with temperature
- 1.0 1.7 %/OC VGS = 10V, ID = 50mA
GFS Forward transconductance
50 100 - mmho VDS = 25V, ID =50mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- 45 55
- 8.0 10
- 2.0 5.0
VGS = 0V,
pF VDS = 25V,
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- - 10
- - 15
VDD = 25V,
-
- 10
ns ID = 150mA,
RGEN = 25Ω
- - 10
VSD Diode forward voltage drop
- 0.8 -
V VGS = 0V, ISD = 500mA
trr Reverse recovery time
- 300 -
ns VGS = 0V, ISD = 500mA
Notes:
1. All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2. All AC parameters sample tested.
N-Channel Switching Waveforms and Test Circuit
10V
Input
0V
10%
VDD
Output
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tf
10%
90%
Pulse
Generator
RGEN
Input
VDD
RL
OUTPUT
D.U.T.
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
2

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