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TC1601 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2W High Linearity and High Efficiency GaAs Power FETs - TRANSCOM

भाग संख्या TC1601
समारोह 2W High Linearity and High Efficiency GaAs Power FETs
मैन्युफैक्चरर्स TRANSCOM 
लोगो TRANSCOM लोगो 
पूर्व दर्शन
1 Page
		
<?=TC1601?> डेटा पत्रक पीडीएफ

TC1601 pdf
TC1601
REV4_20060510
ABSOLUTE MAXIMUM RATINGS (TA=25 °C) RECOMMANDED OPERATING CONDITION
Symbol
Parameter
Rating
Symbol
Parameter
Rating
VDS Drain-Source Voltage
12 V
VGS Gate-Source Voltage
-5 V
ID Drain Current
1.2 A
PT Continuous Dissipation
7.7 W
TCH Channel Temperature
175 °C
TSTG
Storage Temperature
- 65 °C to +175 °C
VDS Drain to Source Voltage
ID Drain Current
8V
500 mA
CHIP DIMENSIONS
1060± 12
DDDD
470± 12
G GG
G
Units: Micrometers
Chip Thickness: 50
Gate Pad: 76.0 x 59.5
Drain Pad: 86.0 x 76.0
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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