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HCS55R140E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - SemiHow

भाग संख्या HCS55R140E
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स SemiHow 
लोगो SemiHow लोगो 
पूर्व दर्शन
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<?=HCS55R140E?> डेटा पत्रक पीडीएफ

HCS55R140E pdf
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 11.5 A
2.0
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 550 V, VGS = 0 V
VDS = 440 V, TJ = 125
VGS = ρ30 V, VDS = 0 V
550
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 420 V, ID = 23 A,
RG = 25 Ÿ
VDS = 420 V, ID = 23 A
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 23 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 23 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=6A, VDD=50V, RG=25:, Starting TJ =25qC
3. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
-- 4.0
0.11 0.14
-- --
-- 1
-- 100
-- ρ100
1410
150
4.1
--
--
--
48 --
22 --
78 --
21 --
22 29
9 --
4.5 --
-- 23
-- 69
-- 1.4
372 --
5.1 --
V
Ÿ
V
nC
nC
nC
A
V
ȝ&
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