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TSUS6202 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Infrared Emitting Diode - Vishay

भाग संख्या TSUS6202
समारोह Infrared Emitting Diode
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
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TSUS6202 pdf
www.vishay.com
TSUS6202
Vishay Semiconductors
180
160
140
120
100
80 RthJA = 230 K/W
60
40
20
0
0
21313
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
120
100
80
60
RthJA = 230 K/W
40
20
0
0
21314
10 20 30 40 50 60 70 80 90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
Temperature coefficient of VF
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 μs
IF = 100 mA
VF
VF
TKVF
-
-
-
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φe
Angle of half intensity
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp = 20 ms
IF = 1.5 A, tp = 100 μs
IF = 100 mA, tp = 20 ms
IF = 20 mA
IR
Cj
Ie
Ie
φe
TKφe
ϕ
-
-
20
170
-
-
-
Peak wavelength
Spectral bandwidth
Temperature coefficient of λp
Rise time
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
λp
Δλ
TKλp
tr
tr
-
-
-
-
-
Fall time
Virtual source diameter
IF = 100 mA
IF = 1.5 A
tf -
tf -
d-
TYP.
1.3
2.2
-1.3
-
30
30
280
15
-0.8
± 15
950
50
0.2
800
400
800
400
3.8
MAX.
1.7
2.7
-
100
-
70
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Rev. 1.0, 29-Sep-15
2 Document Number: 84333
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
TSUS6202Infrared Emitting DiodeVishay
Vishay


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