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MBR230LSFT1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Surface Mount Schottky Power Rectifier - ON Semiconductor

भाग संख्या MBR230LSFT1G
समारोह Surface Mount Schottky Power Rectifier
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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MBR230LSFT1G pdf
MBR230LSFT1G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
30 V
VRWM
VR
Average Rectified Forward Current (At Rated VR, TL = 105°C)
IO 2.0 A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TL = 95°C)
IFRM
4.0 A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
40 A
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg
TJ
dv/dt
−55 to 150
−55 to 125
10,000
°C
°C
V/ms
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Rtjl 26 °C/W
Rtjl 21
Rtja 325
Rtja 82
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
VF
TJ = 25°C TJ = 100°C
V
(IF = 1.0 A)
(IF = 2.0 A)
0.38 0.30
0.43 0.37
Maximum Instantaneous Reverse Current (Note 3)
IR
TJ = 25°C TJ = 100°C
mA
(VR = 30 V)
1.0 25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
http://onsemi.com
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