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BAT54T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Schottky Barrier Diodes - ON Semiconductor

भाग संख्या BAT54T1G
समारोह Schottky Barrier Diodes
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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BAT54T1G pdf
BAT54T1G, SBAT54T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 30 −
V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
− 7.6 10
pF
Reverse Leakage
(VR = 25 V)
IR − 0.5 2.0 mAdc
Forward Voltage
(IF = 0.1 mAdc)
VF
0.22 0.24
Vdc
Forward Voltage
(IF = 30 mAdc)
VF − 0.41 0.5 Vdc
Forward Voltage
(IF = 100 mAdc)
VF − 0.52 0.8 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr − − 5.0 ns
Forward Voltage
(IF = 1.0 mAdc)
VF
0.29 0.32
Vdc
Forward Voltage
(IF = 10 mAdc)
VF
0.35 0.40
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820 W
+10 V
2k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
t
IF
trr t
50 W Output
Pulse
Generator
DUT
50 W Input
Sampling
Oscilloscope
90%
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2

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