DataSheet.in

BAT54M3T5G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Schottky Barrier Diode - ON Semiconductor

भाग संख्या BAT54M3T5G
समारोह Schottky Barrier Diode
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=BAT54M3T5G?> डेटा पत्रक पीडीएफ

BAT54M3T5G pdf
BAT54M3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Breakdown Voltage (IR = 10 mA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage
V(BR)R
30
V
CT − 7.6 10 pF
IR − 0.5 2.0 mA
(IF = 0.1 mA)
VF
− 0.22 0.24 V
(IF = 1.0 mA)
− 0.29 0.32
(IF = 10 mA)
− 0.35 0.40
(IF = 30 mA)
− 0.41 0.5
(IF = 100 mA)
− 0.52 0.8
Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1)
trr − − 5.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
http://onsemi.com
2

विन्यास 4 पेज
डाउनलोड[ BAT54M3T5G Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BAT54M3T5GSchottky Barrier DiodeON Semiconductor
ON Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English