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S29GL064S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 64 Mbit (8 Mbyte) 3.0 V Flash Memory - Cypress Semiconductor

भाग संख्या S29GL064S
समारोह 64 Mbit (8 Mbyte) 3.0 V Flash Memory
मैन्युफैक्चरर्स Cypress Semiconductor 
लोगो Cypress Semiconductor लोगो 
पूर्व दर्शन
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<?=S29GL064S?> डेटा पत्रक पीडीएफ

S29GL064S pdf
S29GL064S
General Description
The S29GL-S mid density family of devices are 3.0-volt single-power flash memory manufactured using 65 nm MirrorBit technology.
The S29GL064S is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. Depending on the model number, the devices
have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input.
The devices can be programmed either in the host system or in standard EPROM programmers.
Access times as fast as 70 ns are available. Note that each access time has a specific operating voltage range (VCC) as specified in
the Product Selector Guide and Ordering Information. Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA,
and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and
output enable (OE#) controls.
Each device requires only a single 3.0-volt power supply for both read and write functions. In addition to a VCC input, a high-
voltage accelerated program (ACC) feature is supported through increased voltage on the WP#/ACC or ACC input. This feature is
intended to facilitate system production.
The device is entirely command set compatible with the JEDEC single-power-supply flash standard. Commands are written to
the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the
programming and erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other
sectors. The device is fully erased when shipped from the factory.
The Advanced Sector Protection features several levels of sector protection, which can disable both the program and erase
operations in certain sectors. Persistent Sector Protection is a method that replaces the previous 12-volt controlled protection
method. Password Sector Protection is a highly sophisticated protection method that requires a password before changes to certain
sectors are permitted.
Device programming and erasure are initiated through command sequences. Once a program or erase operation begins, the host
system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to
determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence
overhead by requiring only two write cycles to program data instead of four.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power
transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of
memory. This can be achieved in-system or via programming equipment.
The Erase Suspend / Erase Resume feature allows the host system to pause an erase operation in a given sector to read or
program any other sector and then complete the erase operation. The Program Suspend / Program Resume feature enables the
host system to pause a program operation in a given sector to read any other sector and then complete the program operation.
The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new
operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the
host system to read boot-up firmware from the flash memory device.
The device reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when
addresses are stable for a specified period of time.
The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP#/ACC pin or WP# pin, depending
on model number. The protected sector is still protected even during accelerated programming.
The Secure Silicon Region provides a 128-word / 256-byte area for code or data that can be permanently protected. Once this
sector is protected, no further changes within the sector can occur.
Cypress MirrorBit flash technology combines years of flash memory manufacturing experience to produce the highest levels of
quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted
erase. The data is programmed using hot electron injection.
Document Number: 001-98286 Rev. *H
Page 2 of 106

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